X-Ray Rocking Curve Characterization of SiC Substrates

X-Ray Rocking Curve Characterization of SiC Substrates

著者名:

掲載資料名:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

シリーズ名:

Materials science forum

シリーズ巻号:

600-603

発行年:

2009

パート:

1

開始ページ:

361

終了ページ:

364

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054132
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2007
会議開催地:	Otsu, Japan
会議開催年:	2007.10.14-2007.10.19
論文注記:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

類似資料:

1 国際会議録 Characterization of SiC Substrates Using X-Ray Rocking Curve Mapping Yoganathan, M., Emorhokpor, E., Kerr, T., Gupta, A., Tanner, C.D., Zwieback, I. Trans Tech Publications	7 国際会議録 Microhardness of 6H- and 4H-SiC Substrates C.R. Eddy Jr., P. Wu, I. Zwieback, B.L. VanMil, R.L. Myers-Ward Trans Tech Publications
2 国際会議録 Characterization of Dislocations and Micropipes in 4H n⁺ SiC Substrates P. Wu, M. Yoganathan, I. Zwieback, Y. Chen, M. Dudley Trans Tech Publications	8 国際会議録 Growth of Large Diameter SiC Crystals by Advanced Physical Vapor Transport Anderson, T., Barrett, D., Chen, J., Emorhokpor, E., Gupta, A., Hopkins, R., Souzis, A., Tanner, C., Yoganathan, M., … Trans Tech Publications
3 国際会議録 Dislocation in 4H n+ SiC Substrates and their Relationship with Epilayer Defects P. Wu, E. Emorhokpor, M. Yoganathan, T. Kerr, J. Zhang, E. Romano, I. Zwieback Trans Tech Publications	9 国際会議録 Growth of Large Diameter 6H SI and 4H n+ SiC Single Crystals Avinash Gupta, Ping Wu, Varatharajan Rengarajan, Xueping Xu, Murugesu Yoganathan, Chris Martin, Ejiro Emorhokpor, Andy … Materials Research Society
4 国際会議録 Study of Etching Processes for SiC Defect Analysis P. Wu, X. Xu, I. Zwieback, J. Hostetler Trans Tech Publications	10 国際会議録 Growth of Undoped (Vanadium-Free) Semi-Insulating 6H-SiC Single Crystals Anderson, T. A., Barrett, D. L., Chen, J., Emorhokpor, E., Gupta, A., Hopkins, R. H., Souzis, A. E., Tamer, C. D., … Trans Tech Publications
5 国際会議録 Status of Large Diameter SiC Single Crystals at II-VI A.K. Gupta, I. Zwieback, A.E. Souzis, M. Yoganathan, T. Anderson Trans Tech Publications	11 国際会議録 X-RAY ROCKING CURVE ANALYSIS OF S-IMPLANTED GaAs Fatemi, M., Thompson, P.E., Chaudhuri, J., Shah, S. Materials Research Society
6 国際会議録 Status of Large Diameter SiC Single Crystals A.K. Gupta, P. Wu, V. Rengarajan, X.P. Xu, M. Yoganathan Trans Tech Publications	12 国際会議録 Mosaicity and Wafer Bending in SiC Wafers as Measured by Double and Triple Crystal X-Ray Rocking Curve and Peak Position Maps K.W. Kirchner, K.A. Jones, M.A. Derenge, M. Dudley, A.R. Powell Trans Tech Publications

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