Synchrotron X-Ray Topographic Studies of Recombination Activated Shockley Partial Dislocations in 4H-Silicon Carbide Epitaxial Layers

Synchrotron X-Ray Topographic Studies of Recombination Activated Shockley Partial Dislocations in 4H-Silicon Carbide Epitaxial Layers

著者名:

掲載資料名:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

シリーズ名:

Materials science forum

シリーズ巻号:

600-603

発行年:

2009

パート:

1

開始ページ:

357

終了ページ:

360

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054132
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2007
会議開催地:	Otsu, Japan
会議開催年:	2007.10.14-2007.10.19
論文注記:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

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1 国際会議録 Determination of the Core-structure of Shockley Partial Dislocations in 4H-SiC Yi Chen, Ning Zhang, Xianrong Huang, Joshua D Caldwell, Kendrick X Liu, Robert E Stahlbush, Michael Dudley Materials Research Society	7 国際会議録 Sense Determination of c-Axis Screw Dislocations in 4H-SiC Y. Chen, X.R. Huang, G. Dhanaraj, M. Dudley, E.K. Sanchez Trans Tech Publications
2 国際会議録 Studies of the Distribution of Elementary Threading Screw Dislocations in 4H Silicon Carbide Wafer Y. Chen, N. Zhang, X.R. Huang, D.R. Black, M. Dudley Trans Tech Publications	8 国際会議録 Dynamic In Situ Synchrotron X-ray Topographic Observations of Dislocations in Notched Ice Crystals Hu, X., Baker, I., Dudley, M. MRS - Materials Research Society
3 国際会議録 Interaction Between Recombination Enhanced Dislocation Glide Process Activated Basal Stacking Faults and Threading Dislocations in 4H-Silicon Carbide Epitaxial … Yi Chen, Michael Dudley, Kendrick X. Liu, Robert E. Stahlbush Materials Research Society	9 国際会議録 Polytype Identification and Mapping in Heteroepitaxial Growth of 3C on Atomically Flat 4H-SiC Mesas Using Synchrotron White-Beam X-Ray Topography Dudley, M., Vetter, W.M., Huang, X.R., Neudeck, P.G., Powell, J.A. Trans Tech Publications
4 国際会議録 Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers K.X. Liu, X. Zhang, R.E. Stahlbush, M. Skowronski, J.D. Caldwell Trans Tech Publications	10 国際会議録 Polytype Identification and Mapping in Heteroepitaxial Growth of 3C on Atomically Flat 4H-SiC Mesas Using Synchrotron White-Beam X-Ray Topography Dudley, M., Vetter, W.M., Huang, X.R., Neudeck, P.G., Powell, J.A. Trans Tech Publications
5 国際会議録 Aspects of Dislocation Behavior in SiC M. Dudley, Y. Chen, X.R. Huang, R.H. Ma Trans Tech Publications	11 国際会議録 SYNCHROTRON X-RAY TOPOGRAPHIC STUDY OF DEFECTS IN HIGH QUALITY, FLUX GROWN KTiOPO4 SINGLE CRYSTALS Wang, S., Dudley, M., Cheng, L. K., Bierlein, J. D. MRS - Materials Research Society
6 国際会議録 Growth Mechanism and Dislocation Characterization of Silicon Carbide Epitaxial Films Govindhan Dhanaraj, Yi Chen, Hui Chen, William M. Vetter, Hui Zhang, Michael Dudley Materials Research Society	12 国際会議録 Nucleation of c-Axis Screw Dislocations at Substrate Surface Damage during 4H-Silicon Carbide Homo-Epitaxy M. Dudley, N. Zhang, Y. Zhang, B. Raghothamachar, E.K. Sanchez Trans Tech Publications

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