Investigation of Defect Formation in 4H-SiC(0001) and (000-1) Epitaxy

Investigation of Defect Formation in 4H-SiC(0001) and (000-1) Epitaxy

著者名:

掲載資料名:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

シリーズ名:

Materials science forum

シリーズ巻号:

600-603

発行年:

2009

パート:

1

開始ページ:

267

終了ページ:

272

総ページ数:

6

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054132
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2007
会議開催地:	Otsu, Japan
会議開催年:	2007.10.14-2007.10.19
論文注記:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

類似資料:

1 国際会議録 Fast Epitaxial Growth of 4H-SiC and Analysis of Defect Transfer H. Tsuchida, M. Ito, I. Kamata, M. Nagano Trans Tech Publications	7 国際会議録 Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers M. Nagano, I. Kamata, H. Tsuchida Trans Tech Publications
2 国際会議録 Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC(000-1) and (0001) Epitaxy Tsuchida, H., Kamata, I., Miyanagi, T., Nakamura, T., Nakayama, K., Ishii, R., Sugawara, Y. Trans Tech Publications	8 国際会議録 Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers I. Kamata, M. Nagano, H. Tsuchida Trans Tech Publications
3 国際会議録 Three-Dimensional Imaging of Extended Defects in 4H-SiC R. Tanuma, M. Nagano, I. Kamata, H. Tsuchida Trans Tech Publications	9 国際会議録 Correlation between Thermal Stress and Formation of Interfacial Dislocations during 4H-SiC Epitaxy and Thermal Annealing X. Zhang, M. Nagano, H. Tsuchida Trans Tech Publications
4 国際会議録 Comparison of Electrical Characteristics of 4H-SiC(0001) and (000-1) Schottky Barrier Diodes Nakamura, T., Miyanagi, T., Kamata, I., Tsuchida, H. Trans Tech Publications	10 国際会議録 Formation of Extended Defects in 4H-SiC Induced by Ion Implantation/Annealing M. Nagano, H. Tsuchida, T. Suzuki, T. Hatakeyama, J. Senzaki Trans Tech Publications
5 国際会議録 Influence of Growth Conditions and Substrate Properties on Formation of Interfacial Dislocations and Dislocation Half-loop Arrays in 4H-SiC(0001) and (000-1) … Hidekazu Tsuchida, Isaho Kamata, Kazutoshi Kojima, Kenji Momose, Michiya Odawara, Tetsuo Takahashi, Yuuki Ishida, … Materials Research Society	11 国際会議録 Investigation of Photoluminescence Emission of Basal Plane Frank-Type Defects in 4H-SiC Epilayers I. Kamata, X. Zhang, H. Tsuchida Trans Tech Publications
6 国際会議録 Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers M. Nagano, I. Kamata, H. Tsuchida Trans Tech Publications	12 国際会議録 Low-Pressure Fast Growth and Characterization of 4H-SiC Epilayers H. Tsuchida, M. Ito, I. Kamata, M. Nagano, T. Miyazawa Trans Tech Publications

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