Nitrogen Doping in Low-Temperature Halo-Carbon Homoepitaxial Growth of SiC

Nitrogen Doping in Low-Temperature Halo-Carbon Homoepitaxial Growth of SiC

著者名:

掲載資料名:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

シリーズ名:

Materials science forum

シリーズ巻号:

600-603

発行年:

2009

パート:

1

開始ページ:

159

終了ページ:

162

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054132
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2007
会議開催地:	Otsu, Japan
会議開催年:	2007.10.14-2007.10.19
論文注記:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

類似資料:

1 国際会議録 Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H-SiC: Morphology, Doping, and Role of HCl Additive H.D. Lin, G. Melnychuk, J.L. Wyatt, Y. Koshka Trans Tech Publications	7 国際会議録 Use of SiCl₄ as Silicon Precursor for Low-Temperature Halo-Carbon Epitaxial Growth of 4H-SiC S.P. Kotamraju, B. Krishnan, G. Melnychuk, Y. Koshka Trans Tech Publications
2 国際会議録 Selective Epitaxial Growth of 4H-SiC with SiO2 Mask by Low-Temperature Halo-Carbon Homoepitaxial Method B. Krishnan, H. Das, H.D. Lin, Y. Koshka Trans Tech Publications	8 国際会議録 4H-SiC PiN Diodes Fabricated Using Low-Temperature Halo-Carbon Epitaxial Growth Method B. Krishnan, J.N. Merrett, G. Melnychuk, Y. Koshka Trans Tech Publications
3 国際会議録 Factors Influencing the Growth Rate, Doping, and Surface Morphology of the Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H SiC with HCl Additive Galyna Melnychuk, Huang De Lin, Siva Prasad Kotamraju, Yaroslav Koshka Materials Research Society	9 国際会議録 Homoepitaxial Growth of 4H-SiC Using CH3CI Carbon Precursor Koshka, Y., Lin, H. D., Melnychuk, G., Mazzola, M. S., Wyatt, J. L. Trans Tech Publications
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5 国際会議録 Lower-Temperature Epitaxial Growth of 4H-SiC Using CH3Cl Carbon Gas Precursor Koshka, Y., Lin, H.D., Melnychuk, G., Wood, C. Trans Tech Publications	11 国際会議録 Investigation of the Mechanism and Growth Kinetics of Homoepitaxial 4H-SiC Growth Using CH3Cl Carbon Precursor Lin, H.D., Wyatt, J.L., Koshka, Y. Trans Tech Publications
6 国際会議録 Local-Loading Effect in Low-Temperature Selective Epitaxial Growth of 4H-SiC by Halo-Carbon Method H. Das, B. Krishnan, G. Melnychuk, Y. Koshka Trans Tech Publications	12 国際会議録 Aluminum Doping by Low-Temperature Homoepitaxial Growth for Ni Ohmic Contacts to p-Type 4H-SiC B. Krishnan, S.P. Kotamraju, G. Melnychuk, N. Merrett, Y. Koshka Trans Tech Publications

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