Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor

Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor

著者名:

掲載資料名:

Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

シリーズ名:

Materials science forum

シリーズ巻号:

600-603

発行年:

2009

パート:

1

開始ページ:

115

終了ページ:

118

総ページ数:

4

出版情報:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00054132
シリーズID:	PA00000012
会議名:	International Conference on Silicon Carbide and Related Materials
回次:	2007
会議開催地:	Otsu, Japan
会議開催年:	2007.10.14-2007.10.19
論文注記:	International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007

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1 国際会議録 Chloride-Based SiC Epitaxial Growth H. Pedersen, S. Leone, A. Henry, F.C. Beyer, A. Lundskog Trans Tech Publications	7 国際会議録 Chloride-Based CVD at High Growth Rates on 3″ Vicinal Off-Angles SiC Wafers S. Leone, A. Henry, O. Kordina, E. Janzén Trans Tech Publications
2 国際会議録 Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles S. Leone, H. Pedersen, F.C. Beyer, S. Andersson, O. Kordina Trans Tech Publications	8 国際会議録 Growth of 4H-SiC Epitaxial Layers on 4° Off-Axis Si-Face Substrates A. Henry, S. Leone, H. Pedersen, O. Kordina, E. Janzén Trans Tech Publications
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