Unipolar resistive switching behavior of high-k ternary rare-earth oxide LaHoO3 thin films for non-volatile memory applications

Unipolar resistive switching behavior of high-k ternary rare-earth oxide LaHoO₃ thin films for non-volatile memory applications

著者名:

掲載資料名:

Materials and technology for nonvolatile memories : symposium held November 30-December 5, 2014, Boston, Massachusetts. U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

1729

発行年:

2015

開始ページ:

23

終了ページ:

28

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781605117065 [1605117064]

言語:

英語

請求記号:

M23500/1729

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00053487
シリーズID:	PA00000011
会議名:	MRS Fall Meeting
回次:	2014
会議開催地:	Boston, Massachusetts, USA
会議開催年:	2014.11.30-2014.12.02
論文注記:	2014 MRS Fall Meeting, Symposium M - Materials and Technology for Nonvolatile Memories, November 30-December 5, 2014, Boston, Massachusetts. U.S.A.

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