Group-III Nitride P-Ttype Nanowire Heterostructure Field Effect Transistors

Group-III Nitride P-Ttype Nanowire Heterostructure Field Effect Transistors

著者名:

掲載資料名:

State-of-the-Art Program on Compound Semiconductors 48 (SOTAPOCS 48) and ZnO, InZnO, and InGaO Related Materials and Devices for Electronic and Photonic Applications

シリーズ名:

ECS transactions

シリーズ巻号:

13(3)

発行年:

2008

開始ページ:

21

終了ページ:

27

総ページ数:

7

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776288 [1566776287]

言語:

英語

請求記号:

E23400/13-3

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00001468
シリーズID:	PA00000034
会議名:	ECS Meeting
回次:	213th
会議開催地:	Phoenix, AZ, USA
会議開催年:	2008.05.18-2008.05.23
論文注記:	213th ECS Meeting, May 18 - May 23, 2008, Phoenix, AZ : State-of-the-Art Program on Compound Semiconductors 48 (SOTAPOCS 48)

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