Enhanced Thermal Dissipation and Light Output of GaN/Sapphire Light-Emitting Diode by Direct Cu Electroplating

Enhanced Thermal Dissipation and Light Output of GaN/Sapphire Light-Emitting Diode by Direct Cu Electroplating

著者名:

掲載資料名:

State-of-the-Art Program on Compound Semiconductors 48 (SOTAPOCS 48) and ZnO, InZnO, and InGaO Related Materials and Devices for Electronic and Photonic Applications

シリーズ名:

ECS transactions

シリーズ巻号:

13(3)

発行年:

2008

開始ページ:

13

終了ページ:

18

総ページ数:

6

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776288 [1566776287]

言語:

英語

請求記号:

E23400/13-3

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00001468
シリーズID:	PA00000034
会議名:	ECS Meeting
回次:	213th
会議開催地:	Phoenix, AZ, USA
会議開催年:	2008.05.18-2008.05.23
論文注記:	213th ECS Meeting, May 18 - May 23, 2008, Phoenix, AZ : State-of-the-Art Program on Compound Semiconductors 48 (SOTAPOCS 48)

類似資料:

1 国際会議録 Thermal Management Design from Chip to Package for High Power InGaN/sapphire LEDs Applications R. Horng, C. Chiang, D. Wuu, H. Lin, Y. Tsai Electrochemical Society	7 国際会議録 Performance and Reliability of InGaN-GaN Light-Emitting Diodes with Mirror Wafer Bonding Technology Peng, W.C., Wu, Y.C., Liu, W.H., Horng, S.C., Hsieh, M.H. Electrochemical Society
2 国際会議録 GaN-Based Light-Emitting Diodes for Vertical Current Injection by Laser Lift-off and Wafer Bonding Techniques Horng, R.-H., Pan, K.-F., Lee, C.-E., Hung, S.-H., Lin, W.-Y., Su, Y.-Y., Yang, C.-C., Wuu, D.-S. Electrochemical Society	8 国際会議録 Stability Effects of Reflective Mirror on GaN LED/Mirror/Si Via Wafer Bonding and Laser Lift-Off Techniques R. Horng, S. Huang, D. Wuu, C. Lin, H. Liu Electrochemical Society
3 国際会議録 Light Output Power Enhancement of GaN-based Vertical Light Emitting Diodes via Fabricating Surface Nanorod Arrays C. Chiu, H. Kuo, T. Lu, S. Wang, C. Hsiao Electrochemical Society	9 国際会議録 Modeling of GaN based resonant-cavity light-emitting diode Z. S. Li, Z. Q. Li, R. Horng SPIE - The International Society of Optical Engineering
4 国際会議録 Fabrication and Characterization of InGaN-Based Green Resonant Cavity Light-Emitting Diodes Using H+ Ion-Implantation R. Horng, S. Huang, H. Kuo, D. Wuu Electrochemical Society	10 国際会議録 Simultaneously Enhancing Internal and Extraction Efficiencies of GaN-based Light Emitting Diodes Via Chemical-Wet-Etching Patterned-Sapphire-Substrate (CWE-PSS) Y.J. Lee, C.H. Chiu, H. Kuo, T.C. Lu, S.C. Wang Electrochemical Society
5 国際会議録 Performance and reliability of wafer-bonded AlGaInP/mirror/Si light-emitting diodes Horng,R.H., Wuu,D.S., Peng,W.C., Huang,M.F., Liu,P.H., Seieh,C.H., Lin,K.C. SPIE - The International Society for Optical Engineering	11 国際会議録 Initial growth effects on the properties of GaN buffer layer and subsequent GaN overlayer by MOCVD Wuu,D.-S., Tseng,W.-H., Lin,W.-T., Horng,R.-H. SPIE - The International Society for Optical Engineering
6 国際会議録 Highly efficient InGaN/GaN LEDs with double-sided textured surfaces and omni-directional mirror structure D.-S. Wuu, S.-H. Huang, R.-H. Horng, C.-Y. Hsieh, K.-W. Yen Society of Photo-optical Instrumentation Engineers	12 国際会議録 Thermal ink-jet device using single-chip silicon microchannels Wuu,D.-S., Cheng,C.Y., Horng,R.H., Chan,G.C., Chiu,S.-L., Wu,Y.-Y. SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12