Investigation of VT Shift Mechanism of High-K Dielectrics caused by Lanthanum Capping for NMOS and Tantalum Capping for PMOS Devices
- 著者名:
- 掲載資料名:
- Advanced gate stack, source/drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment
- シリーズ名:
- ECS transactions
- シリーズ巻号:
- 13(1)
- 発行年:
- 2008
- 開始ページ:
- 123
- 終了ページ:
- 130
- 総ページ数:
- 8
- 出版情報:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 19385862
- ISBN:
- 9781566776264 [1566776260]
- 言語:
- 英語
- 請求記号:
- E23400/13-1
- 資料種別:
- 国際会議録
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