Mobility-Enhanced Device Technologies Using SiGe/Ge MOS Channels

Mobility-Enhanced Device Technologies Using SiGe/Ge MOS Channels

著者名:

掲載資料名:

ULSI process integration 5

シリーズ名:

ECS transactions

シリーズ巻号:

11(6)

発行年:

2007

開始ページ:

61

終了ページ:

74

総ページ数:

14

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775724 [1566775728]

言語:

英語

請求記号:

E23400/11-6

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013283
シリーズID:	PA00000034
会議名:	ECS Meeting
回次:	212th
会議開催地:	Washington, DC, USA
会議開催年:	2007.10.07-2007.10.12
論文注記:	212th ECS Meeting, October 7 - October 12, 2007, Washington, DC

類似資料:

1 国際会議録 (3.1) 3:20 - 3:50 PM - Strained-Si/SiGe-on-Insulator CMOS Technology as a Platform of Device Performance Boosters (Invited) Takagi, S., Mizuno, T., Tezuka, T, Sugiyama, N., Numata, T., Usuda, K., Moriyama, Y., Nakaharai, S., Koga, J., Tanabe, … Electrochemical Society	7 国際会議録 High Performance Strained-SOI CMOSFETs* Takagi, S.-I., Mizuno, T., Tezuka, T., Sugiyania, N., Numata, T., Usuda, K., Moriyama, Y., Nakaharai, S., Koga, J., … Electrochemical Society
2 国際会議録 SiGe-on-Insulator and Ge-on-Insulator Substrates Fabricated by Ge-Condensation Technique for High-Mobility Channel CMOS Devices Tezuka, Tsutomu, Mizuno, Tomohisa, Sugiyama, Naoharu, Nakaharai, Shu, Moriyama, Yoshihiko, Usuda, Koji, Numata, … Materials Research Society	8 国際会議録 (11.2) 3:40 - 4:00 PM - Formation Mechanism of Ge-on-lnsulator Layers by Ge-condensation Technique Nakaharai, S., Tezuka, T., Sugiyama, N., Takagi, S. (MIRAI ASET) Electrochemical Society
3 国際会議録 Prospects and Critical Issues on Ge MOS Technologies S. Takagi, N. Taoka, S. Nakaharai, K. Ikeda, T. Tezuka Electrochemical Society	9 国際会議録 Strain Relaxation of Strained-Si Layers on SiGe-on-Insulator (SGOI) Structures After Mesa Isolation Usuda, Koji, Mizuno, Tomohisa, Tezuka, Tsutomu, Sugiyama, Naoharu, Moriyama, Yoshihiko, Nakaharai, Shu, Takagi, … Materials Research Society
4 国際会議録 Uniaxially Strained Si/SiGe Wire-Channel Transistors T. Tezuka, T. Irisawa, E. Toyoda, N. Sugiyama, S. Takagi Electrochemical Society	10 国際会議録 Ge Condensation Technologies for Advanced MOSFETs on SGOI and GOI Substrates N. Sugiyama, T. Tezuka, T. Irisawa, K. Usuda, Y. Moriyama Electrochemical Society
5 国際会議録 Uniaxially Strained SGOI and SSOI Channels for High Performance Multi-Gate CMOS T. Irisawa, T. Numata, T. Tezuka, K. Usuda, N. Hirashita Electrochemical Society	11 国際会議録 Enhanced Mobility in Buried SiGe Channel PMOS Fabricated using Rapid Thermal Processing Tweet, D.J., Hsu, S.F. Electrochemical Society
6 国際会議録 High performance strained-SOl CMOSFETs Takagi, S-I., Mizuno, T., Tezuka, T., Sugiyama, N, Numata, T., Usuda, K., Monyama, Y., Nakaharai, S., Koga, J., Tanabe, … Electrochemical Society	12 国際会議録 Parasitic Channel in SiGe Heterojunction MOSFETs Hara, Y., Inoue, A., Takagi, T., Kanzawa, Y., Kubo, M. Electrochemical Society

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