Growth of InN by Plasma-Assisted Molecular Beam Epitaxy on InN/GaN and p-GaN Templates

Growth of InN by Plasma-Assisted Molecular Beam Epitaxy on InN/GaN and p-GaN Templates

著者名:

掲載資料名:

State-of-the-art program on compound semiconductors 47 (SOTAPOCS 47) and wide-bandgap semiconductor materials and devices 8

シリーズ名:

ECS transactions

シリーズ巻号:

11(5)

発行年:

2007

開始ページ:

103

終了ページ:

109

総ページ数:

7

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775717 [156677571X]

言語:

英語

請求記号:

E23400/11-5

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013284
シリーズID:	PA00000034
会議名:	ECS Meeting
回次:	212th
会議開催地:	Washington, DC, USA
会議開催年:	2007.10.07-2007.10.12
論文注記:	212th ECS Meeting : State-of-the-Art Program on Compound Semiconductors 47 (SOTAPOCS 47), October 7 - October 12, 2007, Washington, DC

類似資料:

1 国際会議録 Device Challenges for Making a p-Side Down HVPE-Grown n-InGaN/p-GaN Single Heterostructure LED M. Reed, E.D. Readinger, P. Shen, M. Wraback, A. Syrkin Electrochemical Society	7 国際会議録 RHEED Studies of In Effect on the N-Polarity GaN Surface Kinetics Modulation in Plasma-Assisted Molecular-Beam Epitaxy Shen, X.Q., Ide, T., Shimizu, M., Okumura, H. Trans Tech Publications
2 国際会議録 GaN Doped with Neodymium by Plasma-Assisted Molecular Beam Epitaxy for Potential Lasing Applications Eric Readinger, Grace Metcalfe, Hongen Shen, Nate Woodward, Naveen Jha, Volkmar Dierolf, Michael Wraback Materials Research Society	8 国際会議録 Growth of GaInNAs by plasma assisted molecular beam epitaxy Gotthold, David W., Govindaraju, Sridhar, Holmes, Archie L. Jr., Streetman, Ben G. MRS-Materials Research Society
3 国際会議録 Growth of GaN on Porous SiC Substrates by Plasma-Assisted Molecular Beam Epitaxy Inoki, C.K., Kuan, T.S., Lee, C.D., Sagar, Ashutosh, Feenstra, R.M. Materials Research Society	9 国際会議録 Visible Light-Emitting Diodes Grown by Plasma Assisted Molecular Beam Epitaxy on Hydride Vapor-Phase Epitaxy GaN Templates and the Development of Dichromatic … Cabalu, Jasper S., Williams, Adrian D., Chen, Tai-Chou P., France, Ryan, Moustakas, Theodore D. Materials Research Society
4 国際会議録 Growth of AlN on Si(111) by Plasma-Assisted Molecular Beam Epitaxy: Application to Surface Acoustic Wave Devices Schenk, H. P. D., Kipshidze, G. D., Weihnacht, M., Kunze, R., Kaiser, U., Schulze, J., Richter, Wo. MRS - Materials Research Society	10 国際会議録 Effect of Growth Conditions on Electronic and Structural Properties of GZO Films Grown by Plasma-enhanced Molecular Beam Epitaxy on p-GaN(0001)/Sapphire … H.Y. Liu, V. Avrutin, N. Izyumskaya, M.A. Reshchikov, S. Wolgast, C. Kurdak, A.B. Yankovich, A. Kvit, P. Voyles, Ü. … Materials Research Society
5 国際会議録 In Situ Investigation of Surface Stoichiometry During InGaN and GaN Growth by Plasma-Assisted Molecular Beam Epitaxy Using RHEED-TRAXS Tompkins. Randy P., VanMil, Brenda L., Schires, Eric D., Lee, Kyoungnae, Chye, Yewhee, Lederman, David, Myers, David H. Materials Research Society	11 国際会議録 Achievements And Characterizations Of GaN With Ga-Polarity In Radio Frequency Plasma-Assisted Molecular Beam Epitaxy Shen, Xu-Qiang, Ide, T., Cho, S.H., Shimizu, M., Hara, S., Okumura, H. Materials Research Society
6 国際会議録 RHEED Studies of In Effect on the N-Polarity GaN Surface Kinetics Modulation in Plasma-Assisted Molecular-Beam Epitaxy Shen, X.Q., Ide, T., Shimizu, M., Okumura, H. Trans Tech Publications	12 国際会議録 Growth and characterization of InGaN/GaN heterostructures using plasma-assisted molecular beam epitaxy Shim, K. H., Hong, S. E., Kim, K. H., Paek, M. C., Cho, K. I. MRS-Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12