Drain Leakage Current Behavior in Circular Gate SOI nMOSFETs Operating from Room Temperature up to 573K

Drain Leakage Current Behavior in Circular Gate SOI nMOSFETs Operating from Room Temperature up to 573K

著者名:

掲載資料名:

Analytical and diagnostic techniques for semiconductor materials, devices and processes 7

シリーズ名:

ECS transactions

シリーズ巻号:

11(3)

発行年:

2007

開始ページ:

71

終了ページ:

84

総ページ数:

14

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775694 [1566775698]

言語:

英語

請求記号:

E23400/11-3

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013285
シリーズID:	PA00000034
会議名:	ECS Meeting
回次:	212th
会議開催地:	Washington, DC, USA
会議開催年:	2007.10.07-2007.10.12
論文注記:	212th ECS Meeting, October 7 - October 12, 2007, Washington, DC

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1 国際会議録 Study of the Drain Leakage Current Behavior in Circular Gate SOI nMOSFET Using 0.13μm SOI CMOS Technology at High Temperatures L. M. Almeida, M. Bellodi Electrochemical Society	7 国際会議録 Modeling of the Leakage Drain Current in Accumulation-Mode SOI pMOSFETs for High-Temperature Applications Bellodi, M., Iniguez, B., Flandre, D., Martino, J.A. Electrochemical Society
2 国際会議録 The Lcakage Drain Current Behavior in Graded-Channel SOI nMOSFETs Operating up to 300℃ Bellodi, M., Martino, J.A. Electrochemical Society	8 国際会議録 Study of the Leakage Drain Current Components in Accumulation-Mode SOT pMOSFETs at High-Temperatures Bellodi, M, Martino, J A Electrochemical Society
3 国際会議録 Study of the leakage drain current In graded-channel SOI nMOSFETs at high-temperatures Bellodi, M., Martino, J.A. Electrochemical Society	9 国際会議録 Temperature Influence on the Generation Lifetime Determination Based on Drain Current Transients in Partially Depleted SOI nMOSFETs Martino, J.A., Rafi, J.M., Mercha, A., Simoen, E., Claeys, C. Electrochemical Society
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5 国際会議録 Temperature Influences on the Drain Leakage Current Behavior in Graded-Channel SOI NMOS FETs Bellodi, M., Martino, J. A. Electrochemical Society	11 国際会議録 Behavior of Graded Channel SOI Gate-All-Around NMOSFET Devices at High Temperatures dos Santos, C. D. G., Pavanello, M. A., Martino, J. A., Flandre, D., Raskin, J.-P. Electrochemical Society
6 国際会議録 The Leakage Current Composition in Thin Film SOI NMOSFETS at High Temperatures Bellodi, M., Martino, J.A. Electrochemical Society	12 国際会議録 Behavior of Graded-Channel Fully Depleted SOI NMOSFET at High Temperatures Galeti, M., Pavanello, M.A., Martino, J.A. Electrochemical Society

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