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Drain Leakage Current Behavior in Circular Gate SOI nMOSFETs Operating from Room Temperature up to 573K

著者名:
掲載資料名:
Analytical and diagnostic techniques for semiconductor materials, devices and processes 7
シリーズ名:
ECS transactions
シリーズ巻号:
11(3)
発行年:
2007
開始ページ:
71
終了ページ:
84
総ページ数:
14
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566775694 [1566775698]
言語:
英語
請求記号:
E23400/11-3
資料種別:
国際会議録

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