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Maintaining a Stable Etch Selectivity between Silicon Nitride and Silicon Dioxide in a Hot Phosphoric Acid Bath

著者名:
掲載資料名:
Cleaning and surface conditioning technology in semiconductor device manufacturing 10
シリーズ名:
ECS transactions
シリーズ巻号:
11(2)
発行年:
2007
開始ページ:
63
終了ページ:
70
総ページ数:
8
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566775687 [156677568X]
言語:
英語
請求記号:
E23400/11-2
資料種別:
国際会議録

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