Linearity Analysis in Double Gate Graded-Channel Soi Devices Applied to 2-Mos Mosfet-C Balanced Structures

Linearity Analysis in Double Gate Graded-Channel Soi Devices Applied to 2-Mos Mosfet-C Balanced Structures

著者名:

掲載資料名:

Microelectonics Technology and Devices - SBMicro 2008

シリーズ名:

ECS transactions

シリーズ巻号:

14(1)

発行年:

2008

開始ページ:

273

終了ページ:

282

総ページ数:

10

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776462 [1566776465]

言語:

英語

請求記号:

E23400/14-1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013290
シリーズID:	PA00000034
会議名:	Symposium on Microelectronics Technology and Devices
回次:	23rd
会議開催地:	Gramado, Brazil
会議開催年:	2008.09.01-2008.09.04
論文注記:	23rd Symposium on Microelectronics Technology and Devices, September 1 - September 4, 2008, Gramado, Brazil

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1 国際会議録 Application of Double Gate Graded-Channel SOI in MOSFET-C Balanced Structures R. T. Doria, M. A. Pavanello, A. Cerdeira, J. Raskin, D. Flandre Electrochemical Society	7 国際会議録 Analysis of Matching in Graded-Channel SOI MOSFETs M. de Souza, D. Flandre, M. A. Pavanello Electrochemical Society
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