Influence of the Drain Bias and Gate Length of Partially Depleted SOI MOSFETs on the ZTC Biasing Point

Influence of the Drain Bias and Gate Length of Partially Depleted SOI MOSFETs on the ZTC Biasing Point

著者名:

掲載資料名:

Microelectonics Technology and Devices - SBMicro 2008

シリーズ名:

ECS transactions

シリーズ巻号:

14(1)

発行年:

2008

開始ページ:

243

終了ページ:

252

総ページ数:

10

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776462 [1566776465]

言語:

英語

請求記号:

E23400/14-1

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00013290
シリーズID:	PA00000034
会議名:	Symposium on Microelectronics Technology and Devices
回次:	23rd
会議開催地:	Gramado, Brazil
会議開催年:	2008.09.01-2008.09.04
論文注記:	23rd Symposium on Microelectronics Technology and Devices, September 1 - September 4, 2008, Gramado, Brazil

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1 国際会議録 The temperature mobility degradation influence on the ZTC of PD and FD SOI MOSFETs Camillo, L.M., Martino, J.A., Simoen, E., Claeys, C. Electrochemical Society	7 国際会議録 HALO Effects on 0.13 μm Floating-Body Partially Depleted SOI n-MOSFETs iII Low Temperature Operation J. A. Martino, M. A. Pavanello, E. Simoen, C. Claeys Electrochemical Society
2 国際会議録 Simple Analytical Model to Study the ZTC Bias Point in FinFETs M. Bellodi, L. Camillo, J. A. Martino, E. Simoen, C. Claeys Electrochemical Society	8 国際会議録 Impact of Halo Implantation on the Lifetime Assessment in Partially Depleted SOI Transistors M. Galeti, J. A. Martino, E. R. Simoen, C. L. Claeys Electrochemical Society
3 国際会議録 Temperature Influence on the Generation Lifetime Determination Based on Drain Current Transients in Partially Depleted SOI nMOSFETs Martino, J.A., Rafi, J.M., Mercha, A., Simoen, E., Claeys, C. Electrochemical Society	9 国際会議録 A Study on the Self-Heating Effect in Deep-Submicrometer Partially Depleted SOI MOSFETs at Low Temperatures Pavanello, M.A., Martino, J.A., Simoen, E., Mercha, A., Claeys, C., Dc Meyer, K. Electrochemical Society
4 国際会議録 Influence of the Back Gate Voltage on the Total Series Resistance of Fully Depleted SOI MOSFETS at 300 K and 77 K Nicolett, A.S., Martino, J.A., Simoen, E., Claeys, C. Electrochemical Society	10 国際会議録 Comparison between Bulk and Floating Body Partially Depleted SOI NMOSFETs for High Frequency Analog Applications Operating from 300 K down to 95 K Pavanello, M. A., Martino, J. A., Simoen, E., Claeys, C. Electrochemical Society
5 国際会議録 Evaluation of the Channel Engineering Impact on the Analog Performance of Deep-Submicrometer Partially Depleted SOI MOSFETs at Low Temperatures Pavanello, M. A., Martino, J. A., Simoen, E., Claeys, C. Electrochemical Society	11 国際会議録 Back-gate induced noise overshoot in partially-depleted SOI MOSFETs Lukyanchikova, N., Garbar, N., Smolanka, A., Simoen, E., Claeys, C. Kluwer Academic Publishers
6 国際会議録 Temperature and Oxide Thickness Influence on the Generation Lifetime Determination in Partially Depleted SOI NMOSFETs Galeti, M., Martino, J. A., Simoen, E., Claeys, C. Electrochemical Society	12 国際会議録 Series Resistance Influence on the Linear Kink Effect in Twin-Gate Partially Depleted SOI nMOSFETs Paula Agopian, João Martino, Eddy Simoen, Cor Claeys Electrochemical Society

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