Loading Effects in the Selective Epitaxial Growth of n-Type Doped SiGe-Structures with LPCVD

Loading Effects in the Selective Epitaxial Growth of n-Type Doped SiGe-Structures with LPCVD

著者名:

掲載資料名:

Solid-State Joint Session (General)

シリーズ名:

ECS transactions

シリーズ巻号:

3(33)

発行年:

2007

開始ページ:

31

終了ページ:

34

総ページ数:

4

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781604239102 [1604239107]

言語:

英語

請求記号:

E23400/3-30 [33]

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00046566
シリーズID:	PA00000034
会議名:	ECS Meeting
回次:	210th
会議開催地:	Cancun, Mexico
会議開催年:	2006.10.29-2006.11.03
論文注記:	210th ECS Meeting, October 29-November 3, 2006, Cancun, Mexico

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