Selective Epitaxial Growth of Arsenic-Doped SiGe Structures with LPCVD

Selective Epitaxial Growth of Arsenic-Doped SiGe Structures with LPCVD

著者名:

掲載資料名:

Solid-State Posters (General)

シリーズ名:

ECS transactions

シリーズ巻号:

1(30)

発行年:

2006

開始ページ:

33

終了ページ:

40

総ページ数:

8

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566774826 [1566774829]

言語:

英語

請求記号:

E23400/1-26 [30]

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00053418
シリーズID:	PA00000034
会議名:	ECS meeting
回次:	208th
会議開催地:	Los Angeles, California, USA
会議開催年:	2005.10.16-2005.10.21
論文注記:	208th ECS Meeting, October 16-October 21, 2005, Los Angeles, California

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1 国際会議録 Loading Effects in the Selective Epitaxial Growth of n-Type Doped SiGe-Structures with LPCVD M.W. Schindler, O. Senftleben, I. Eisele, W. Taylor Electrochemical Society	7 国際会議録 Ge Selective Epitaxial Growth with Ultra Thin SiGe Buffer Layer J. Nakatsuru, H. Date, S. Mashiro, M. Ikemoto Electrochemical Society
2 国際会議録 Selective Epitaxial Growth of SiGe Films in LPCVD Reactor Systems- Characterization of SiGe Films by Ellipsometry Lee, I.M., Wang, W.C., Koh, M.T.K., Denton, J.P., Takoudis, C.G., Kram, E.P., Neudeck, G.W. Electrochemical Society	8 国際会議録 The Necessity of RTCVD in Advanced Epitaxial Growth of Si and SiGe Boer, W. B. de, Theunissen, M. J. J., Linden, R. H. J. Van Der MRS - Materials Research Society
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5 国際会議録 (19.2) 1:30 - 1:50 PM - Maximization of Active As Doping in (selective) Epitaxial Si and SiGe Layers Loo, R., Bajolet, P., Maes, J.W., Bauer, M., Caymax, M., Arena, C. (MEC) Electrochemical Society	11 国際会議録 INVITED: Si AND SiGe SELECTIVE EPITAXIAL GROWTH BY UHV-CVD Tatsumi, T., Aoyama, K. Electrochemical Society
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