Sequential Plasma Activated Process for Silicon Direct Bonding

Sequential Plasma Activated Process for Silicon Direct Bonding

著者名:

掲載資料名:

Semiconductor wafer bonding 9 : science, technology, and applications

シリーズ名:

ECS transactions

シリーズ巻号:

3(6)

発行年:

2006

開始ページ:

191

終了ページ:

202

総ページ数:

12

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775069 [156677506X]

言語:

英語

請求記号:

E23400/3-6

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047114
シリーズID:	PA00000034
会議名:	International Symposium on Semiconductor Wafer Bonding ; Fall Meeting of the Electrochemical Society
回次:	9th
会議開催地:	Cancun, Mexico
会議開催年:	2006.00.00
論文注記:	210th ECS Meeting, October 29-November 3, 2006, Cancun, Mexico

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