High-Performance Low Temperature Poly-Silicon Thin Film Transistors Fabricated by Excimer Laser Irradiation with Bottom-Gate Scheme

High-Performance Low Temperature Poly-Silicon Thin Film Transistors Fabricated by Excimer Laser Irradiation with Bottom-Gate Scheme

著者名:

掲載資料名:

Thin Film Transistor Technology 8

シリーズ名:

ECS transactions

シリーズ巻号:

3(8)

発行年:

2006

開始ページ:

143

終了ページ:

148

総ページ数:

6

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775083 [1566775086]

言語:

英語

請求記号:

E23400/3-8

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047116
シリーズID:	PA00000034
会議名:	Symposium on Thin Film Transistor Technologies - TFT
回次:	8th
会議開催地:	Cancun, Mexico
会議開催年:	2006.10.29-2006.11.03
論文注記:	210th ECS Meeting, October 29-November 3, 2006, Cancun, Mexico

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