Nucleation and Movement of Dislocations during Relaxation of He Implanted SixGe1-x/Six Heterostructures
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Electrochemical Society |
7
国際会議録
The Effect of Ion-Implantation-Induced Defects on Strain Relaxation in GexSi1-x/Si Heterostructures
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Electrochemical Society |
Trans Tech Publications |
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