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Influence of Strained Si1-yGey Layer Thickness and Composition on Hole Mobility Enhancement in Heterostructure p-MOSFETs with Ge Contents y from 0.7 to 1.0

著者名:
掲載資料名:
SiGe and Ge, materials, processing, and devices
シリーズ名:
ECS transactions
シリーズ巻号:
3(7)
発行年:
2006
開始ページ:
963
終了ページ:
972
総ページ数:
10
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
19385862
ISBN:
9781566775076 [1566775078]
言語:
英語
請求記号:
E23400/3-7
資料種別:
国際会議録

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