Effects of Proton Radiation on Device Modeling of SiGe Power HBTs
類似資料:
1
国際会議録
Microwave noise in III-V- and SiGe-based HBTs: comparison, trends, and numbers (Invited Paper)
SPIE - The International Society of Optical Engineering |
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |
10
国際会議録
Indium Phosphide HBT Device Parameter Extraction for Spice Modeling and Process Optimization
Electrochemical Society |
SPIE-The International Society for Optical Engineering |
Electrochemical Society |
Electrochemical Society |
SPIE-The International Society for Optical Engineering |