Prospects and Critical Issues on Ge MOS Technologies

Prospects and Critical Issues on Ge MOS Technologies

著者名:

掲載資料名:

SiGe and Ge, materials, processing, and devices

シリーズ名:

ECS transactions

シリーズ巻号:

3(7)

発行年:

2006

開始ページ:

823

終了ページ:

829

総ページ数:

7

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775076 [1566775078]

言語:

英語

請求記号:

E23400/3-7

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047115
シリーズID:	PA00000034
会議名:	SiGe and Ge Materials, Processing, and Devices Symposium ; Joint International Electrochemical Society Meeting ; Meeting of the Electrochemical Society ; Congreso de la Sociedad Mexicana de Electroquimica
回次:	2nd ; 2006 ; 210th ; 21st
会議開催地:	Cancun, Mexico
会議開催年:	2006.10.29-2006.11.03
論文注記:	210th ECS Meeting, October 29-November 3, 2006, Cancun, Mexico

類似資料:

1 国際会議録 Mobility-Enhanced Device Technologies Using SiGe/Ge MOS Channels S. Takagi, T. Irisawa, T. Tezuka, S. Nakaharai, T. Numata Electrochemical Society	7 国際会議録 Uniaxially Strained Si/SiGe Wire-Channel Transistors T. Tezuka, T. Irisawa, E. Toyoda, N. Sugiyama, S. Takagi Electrochemical Society
2 国際会議録 (11.2) 3:40 - 4:00 PM - Formation Mechanism of Ge-on-lnsulator Layers by Ge-condensation Technique Nakaharai, S., Tezuka, T., Sugiyama, N., Takagi, S. (MIRAI ASET) Electrochemical Society	8 国際会議録 Critical Issues for MOS Based Power Devices in 4H-SiC S.H. Ryu, S. Dhar, S.K. Haney, A. Agarwal, A.J. Lelis Trans Tech Publications
3 国際会議録 (3.1) 3:20 - 3:50 PM - Strained-Si/SiGe-on-Insulator CMOS Technology as a Platform of Device Performance Boosters (Invited) Takagi, S., Mizuno, T., Tezuka, T, Sugiyama, N., Numata, T., Usuda, K., Moriyama, Y., Nakaharai, S., Koga, J., Tanabe, … Electrochemical Society	9 国際会議録 Ge Condensation Technologies for Advanced MOSFETs on SGOI and GOI Substrates N. Sugiyama, T. Tezuka, T. Irisawa, K. Usuda, Y. Moriyama Electrochemical Society
4 国際会議録 High performance strained-SOl CMOSFETs Takagi, S-I., Mizuno, T., Tezuka, T., Sugiyama, N, Numata, T., Usuda, K., Monyama, Y., Nakaharai, S., Koga, J., Tanabe, … Electrochemical Society	10 国際会議録 Nikon EB stepper:its system concept and countermeasures for critical issues Suzuki,K., Fujiwara,T., Hada,K., Hirayanagi,N., Kawata,S., Morita,K., Okamoto,K., Okino,T., Shimizu,S., Yahiro,T. SPIE - The International Society for Optical Engineering
5 国際会議録 High Performance Strained-SOI CMOSFETs* Takagi, S.-I., Mizuno, T., Tezuka, T., Sugiyania, N., Numata, T., Usuda, K., Moriyama, Y., Nakaharai, S., Koga, J., … Electrochemical Society	11 国際会議録 High Temperature Ion Implantation and Activation Annealing Technologies for Mass Production of SiC Power Devices K. Tezuka, T. Tsuyuki, S. Shimizu, S. Nakamata, T. Tsuji Trans Tech Publications
6 国際会議録 Performance of Germanium Metal-Insulator-Semiconductor Field Effect Transistors with Nickel Germanide Source/Drain N. Taoka, K. Ikeda, T. Yamamoto, Y. Yamashita, M. Harada Electrochemical Society	12 国際会議録 Strain Relaxation of Strained-Si Layers on SiGe-on-Insulator (SGOI) Structures After Mesa Isolation Usuda, Koji, Mizuno, Tomohisa, Tezuka, Tsutomu, Sugiyama, Naoharu, Moriyama, Yoshihiko, Nakaharai, Shu, Takagi, … Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12