Interlayer-Assisted Stability of Germanosilicide for Heavily-Doped n+-Si0.83Ge0.17 Grown by Reduced Pressure Chemical Vapor Deposition
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7
国際会議録
Absorption and photoluminescence of Ga0.017Ge0.25As0.083S0.65 glasses doped with rare-earth ions
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8
国際会議録
Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition
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11
国際会議録
Characteristics of Gallium Oxide Nanowires Synthesized by the Metalorganic Chemical Vapor Deposition
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Materials Research Society |