Noise and Mobility Characteristics of Bulk and Fully Depleted SOI pMOSFETs using Si and SiGe channels

Noise and Mobility Characteristics of Bulk and Fully Depleted SOI pMOSFETs using Si and SiGe channels

著者名:

掲載資料名:

SiGe and Ge, materials, processing, and devices

シリーズ名:

ECS transactions

シリーズ巻号:

3(7)

発行年:

2006

開始ページ:

67

終了ページ:

72

総ページ数:

6

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775076 [1566775078]

言語:

英語

請求記号:

E23400/3-7

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047115
シリーズID:	PA00000034
会議名:	SiGe and Ge Materials, Processing, and Devices Symposium ; Joint International Electrochemical Society Meeting ; Meeting of the Electrochemical Society ; Congreso de la Sociedad Mexicana de Electroquimica
回次:	2nd ; 2006 ; 210th ; 21st
会議開催地:	Cancun, Mexico
会議開催年:	2006.10.29-2006.11.03
論文注記:	210th ECS Meeting, October 29-November 3, 2006, Cancun, Mexico

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