Effects of Carbon Co-Implantation on Transient Enhanced Diffusion and Performances of the Phosphorus Doped Ultra-Shallow Junction Nano NMOSFET

Effects of Carbon Co-Implantation on Transient Enhanced Diffusion and Performances of the Phosphorus Doped Ultra-Shallow Junction Nano NMOSFET

著者名:

掲載資料名:

Innovation for applied science and technology : selected, peer reviewed papers from the Second International Conference on Engineering and Technology Innovation 2012, November 2-6, 2012, Kaohsiung, Taiwan, R. O. C.

シリーズ名:

Applied mechanics and materials

シリーズ巻号:

284-287

発行年:

2013

巻:

1

開始ページ:

98

終了ページ:

102

総ページ数:

5

出版情報:

Stafa-Zuerich: Trans Tech Publications

ISSN:

16609336

ISBN:

9781627480550 [1627480552]

言語:

英語

請求記号:

A69500/284

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00053055
シリーズID:	PA00000242
会議名:	International Conference on Engineering and Technology Innovation
回次:	2nd
会議開催地:	Kaohsiung, Taiwan, R.O.C.
会議開催年:	2012.11.02-2012.11.06
論文注記:	2nd International Conference on Engineering and Technology Innovation, Kaohsiung, Taiwan, R.O.C., November 2-6, 2012

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