Hole Mobility in Si(110) p-MOS Transistors

Hole Mobility in Si(110) p-MOS Transistors

著者名:

掲載資料名:

Solid State (General) - 214th ECS Meeting/PRiME 2008

シリーズ名:

ECS transactions

シリーズ巻号:

16(40)

発行年:

2009

開始ページ:

7

終了ページ:

12

総ページ数:

6

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781615673124 [1615673121]

言語:

英語

請求記号:

E23400/16-36 [40]

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00049535
シリーズID:	PA00000034
会議名:	Meeting of the Electrochemical Society
回次:	214th
会議開催地:	Honoulu, Hawaii, USA
会議開催年:	2008.10.12-2008.10.17
論文注記:	214th ECS Meeting, October 12-17, 2008, Honolulu, Hawaii, USA

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