SiCP Selective Epitaxial Growth in Recessed Source/Drain Regions yielding to Drive Current Enhancement in n-channel MOSFET

SiCP Selective Epitaxial Growth in Recessed Source/Drain Regions yielding to Drive Current Enhancement in n-channel MOSFET

著者名:

掲載資料名:

SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices

シリーズ名:

ECS transactions

シリーズ巻号:

16(10)

発行年:

2008

開始ページ:

1001

終了ページ:

1013

総ページ数:

13

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776561 [1566776562]

言語:

英語

請求記号:

E23400/16-10

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047173
シリーズID:	PA00000034
会議名:	SiGe, Ge, and Related Compounds: Materials, Processing, and Devices Symposium ; PRiME Joint International Conference
回次:	3rd ; 2008
会議開催地:	Honolulu, Hawaii, USA
会議開催年:	2008.10.12-2008.10.17
論文注記:	3rd SiGe, Ge, and Related Compounds: Materials, Processing, and Devices Symposium which is part of the PRiME 2008 Joint International Conference held in Honolulu, Hawaii from October 12-17, 2008

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