Selective Epitaxial Growth of Ge-on-Si for Photodiode Applications

Selective Epitaxial Growth of Ge-on-Si for Photodiode Applications

著者名:

掲載資料名:

SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices

シリーズ名:

ECS transactions

シリーズ巻号:

16(10)

発行年:

2008

開始ページ:

837

終了ページ:

847

総ページ数:

11

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776561 [1566776562]

言語:

英語

請求記号:

E23400/16-10

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047173
シリーズID:	PA00000034
会議名:	SiGe, Ge, and Related Compounds: Materials, Processing, and Devices Symposium ; PRiME Joint International Conference
回次:	3rd ; 2008
会議開催地:	Honolulu, Hawaii, USA
会議開催年:	2008.10.12-2008.10.17
論文注記:	3rd SiGe, Ge, and Related Compounds: Materials, Processing, and Devices Symposium which is part of the PRiME 2008 Joint International Conference held in Honolulu, Hawaii from October 12-17, 2008

類似資料:

1 国際会議録 *EPITAXIAL GROWTH OF Si1-XGeX/Si HETEROSTRUCTURES BY LIMITED REACTION PROCESSING FOR MINORITY CARRIER DEVICE APPLICATIONS King, C. A., Hoyt, J. L., Noble, D. B, Gronet, C. M., Gibbons, J. F., Scott, M. P., Laderman, S. S., Kamains, T. I., … Materials Research Society	7 国際会議録 Loading Effects during Non-Selective Epitaxial Growth of Si and SiGe Peinejori, I., Zhang, S.-L., Grahn, J.V., OEstling, M. Electrochemical Society
2 国際会議録 Influence of Strained Si1-yGey Layer Thickness and Composition on Hole Mobility Enhancement in Heterostructure p-MOSFETs with Ge Contents y from 0.7 to 1.0 C. Ni Chleirigh, O. Olubuyide, J.L. Hoyt Electrochemical Society	8 国際会議録 Ge Selective Epitaxial Growth with Ultra Thin SiGe Buffer Layer J. Nakatsuru, H. Date, S. Mashiro, M. Ikemoto Electrochemical Society
3 国際会議録 ELECTRON MICROSCOPY CHARACTERIZATION OF EPITAXIAL GROWTH OF Ag DEPOSITED ON MgO MICROCUBES Liu, J., Pan, M., Spinnler, G.E. Materials Research Society	9 国際会議録 Selective Epitaxial Growth with Full Control of Pattern Dependency Behavior for pMOSFET Structures M. Kolahdouz, J. Hallstedt, M. Ostling, R. Wise, H.H. Radamson Electrochemical Society
4 国際会議録 Laser Spike Annealing of Strained Si/ Strained Si0.3GeO.7/ Relaxed SiO.7GeO.3 Dual Channel High Mobility p-MOSFETs C. Ni Chleirigh, X. Wang, G. Rimple, Y. Wang, M. Canonico, D. D. Theodore, O. Olubuyide, J. L. Hoyt Electrochemical Society	10 国際会議録 Epitaxial Growth and Electronic Characterization of Carbon-Containing Silicon-Based Heterostructures Hoyt, J. L., Mitchell, T. O., Rim, K., Singh, D. V., Gibbons, J. F. MRS - Materials Research Society
5 国際会議録 Integrated optical components in silicon for high speed analog-to-digital conversion S. J. Spector, T. M. Lyszczarz, M. W. Geis, D. M. Lennon, J. U. Yoon, M. E. Grein, R. T. Schulein, R. Amatya, J. Birge, … SPIE - The International Society of Optical Engineering	11 国際会議録 Three-dimensional functional integration in silicon using confined selective epitaxial growth Bartek,M., Gennissen,P.T.J., Wolffenbuttel,R.F. SPIE-The International Society for Optical Engineering
6 国際会議録 IR terahertz-bandwidth InGaAs MSM photodiode for communications and sensing applications Levine,J., O'Hagan,M., Palmer,J.R., Halama,G.E., McAdoo,J.A., Carr,D., Currie,M., Hsiang,T.Y., Li,J., Lorenzo,L., … SPIE - The International Society for Optical Engineering	12 国際会議録 Growth and Characterization of CuInSe2 Epitaxial Films for Device Applications Niki, S., Kurafuji, T., Fons, P. J., Kim, I., Hellman, O., Yamada, A. MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12