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SiGe Selective Epitaxy: Morphology and Thickness Control for High Performance CMOS Technology

著者名:
掲載資料名:
SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices
シリーズ名:
ECS transactions
シリーズ巻号:
16(10)
発行年:
2008
開始ページ:
475
終了ページ:
483
総ページ数:
9
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
19385862
ISBN:
9781566776561 [1566776562]
言語:
英語
請求記号:
E23400/16-10
資料種別:
国際会議録

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