Blank Cover Image

Highly Stable Bottom-Gate Nanocrystalline Silicon Thin Film Transistor Fabricated Employing ICP-CVD

著者名:
掲載資料名:
Thin Film Transistors 9
シリーズ名:
ECS transactions
シリーズ巻号:
16(9)
発行年:
2008
開始ページ:
171
終了ページ:
176
総ページ数:
6
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
19385862
ISBN:
9781566776554 [1566776554]
言語:
英語
請求記号:
E23400/16-9
資料種別:
国際会議録

類似資料:

1 国際会議録 The Characteristics of Hot-Carrier Stressed Bottom-Gate Polycrystalline Silicon Thin-Film Transistors Employing Alternating Magnetic-Field-Enhanced Rapid …

W. Lee, H. Shin, K. Cho, J. Choi, C. Kim

Electrochemical Society
7 国際会議録 The effect of active-layer thickness on the characteristic of nanocrystalline silicon thin film transistor

Sun-Jae Kim, Sang-Myeon Han, Seung-Hee Kuk, Jeong-Soo Lee, Min-Koo Han

Materials Research Society
2 国際会議録 Incubation Layer-Free Nanocrystalline-Si Thin Film Fabricated by ICP-CVD at 150℃ for Flexible Electronics

Sang-Myeon Han, Young-Kwan Cha, Joong-Hyun Park, Sang-Geun Park, YoungSoo Park, Min-Koo Han

Materials Research Society
8 国際会議録 Gate Dielectrics for Thin Film Transistor of Nanocrystalline Silicon Deposited at 150℃

Cheng, I.-C., Wagner, S.

Electrochemical Society
3 国際会議録 Incubation Layer-Free Nanocrystalline-Si Thin Film Fabricated by ICP-CVD at 150°C for Flexible Electronics

Sang-Myeon Han, Young-Kwan Cha, Joong-Hyun Park, Sang-Geun Park, YoungSoo Park, Min-Koo Han

Materials Research Society
9 国際会議録 Nanocrystalline Silicon by Microwave CVD for Thin Film Transistors and Solar Cells

Song, Young J., Lee, Hak-Gyu, Teng, Lihong, Anderson, Wayne A.

Materials Research Society
4 国際会議録 Poly-Si Thin Film Transistors Fabricated By Employing Selective Si Ion-Implantation And Excimer Laser Annealing

Han, M. K., Jeon, J. H., Lee, M. C., Park, J. W.

Materials Research Society
10 国際会議録 High-Performance Low Temperature Poly-Silicon Thin Film Transistors Fabricated by Excimer Laser Irradiation with Bottom-Gate Scheme

C. Tsai, H. Chen, Y. Lee, H. Cheng

Electrochemical Society
5 国際会議録 Nanocrystalline Silicon Films Deposited by RF PECVD for Bottom-Gate Thin-Film Transistors

Mohammad Reza Esmaeili Rad, Czang-Ho Lee, Andrei Sazonov, Arokia Nathan

Materials Research Society
11 国際会議録 A NEW MODEL FOR SERIES RESISTANCE OF AMORPHOUS SILICON THIN FILM TRANSISTOR

Kim,Y.S., Park, J.S., Lee, S.K., Hwang, J.R., Choi, H.S., Choi, Y.I., Han, M.K.

Materials Research Society
6 国際会議録 ACCELERATED DEGRADATION MECHANISMS IN AMORPHOUS SILICON THIN FILM TRANSISTORS .

Chung, I.J., Oh, C.H., Kim, W.Y., Hwang, J.Y., Kim, Y.S., Park, J.S., Lee, S.K., Han, M.K.

Materials Research Society
12 国際会議録 EFFECTS OF ULTRAVIOLET RADIATION ON THE CHARACTERISTICS OF HYDROGENATED AMORPHOUS SILICON THIN FILM TRANSISTORS

Lee, S.K., Park, J.S., Kim, Y.S., Hwang, J.R., Oh, C.H., Han, M.K.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12