The Characteristics of Hot-Carrier Stressed Bottom-Gate Polycrystalline Silicon Thin-Film Transistors Employing Alternating Magnetic-Field-Enhanced Rapid Thermal Annealing

The Characteristics of Hot-Carrier Stressed Bottom-Gate Polycrystalline Silicon Thin-Film Transistors Employing Alternating Magnetic-Field-Enhanced Rapid Thermal Annealing

著者名:

掲載資料名:

Thin Film Transistors 9

シリーズ名:

ECS transactions

シリーズ巻号:

16(9)

発行年:

2008

開始ページ:

67

終了ページ:

72

総ページ数:

6

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776554 [1566776554]

言語:

英語

請求記号:

E23400/16-9

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047172
シリーズID:	PA00000034
会議名:	Symposium on Thin Film Transistor Technologies (TFT 9)
回次:	9th
会議開催地:	Honolulu, Hawaii, USA
会議開催年:	2008.10.13-2008.10.16
論文注記:	Symposium on Thin Film Transistor Technologies

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