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The Characteristics of Hot-Carrier Stressed Bottom-Gate Polycrystalline Silicon Thin-Film Transistors Employing Alternating Magnetic-Field-Enhanced Rapid Thermal Annealing

著者名:
掲載資料名:
Thin Film Transistors 9
シリーズ名:
ECS transactions
シリーズ巻号:
16(9)
発行年:
2008
開始ページ:
67
終了ページ:
72
総ページ数:
6
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
19385862
ISBN:
9781566776554 [1566776554]
言語:
英語
請求記号:
E23400/16-9
資料種別:
国際会議録

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