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Fabrication Process for Double Barrier Si-Based Quantum Well Resonant Tunneling Diodes (RTD) by UHV Wafer Bonding

著者名:
掲載資料名:
Semiconductor Wafer Bonding 10: Science, Technology, and Applications
シリーズ名:
ECS transactions
シリーズ巻号:
16(8)
発行年:
2008
開始ページ:
525
終了ページ:
530
総ページ数:
6
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
19385862
ISBN:
9781566776547 [1566776546]
言語:
英語
請求記号:
E23400/16-8
資料種別:
国際会議録

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