Electrical Properties of the Bonding Interface in a (110)/(100) Direct-Silicon-Bonded (DSB) Wafer

Electrical Properties of the Bonding Interface in a (110)/(100) Direct-Silicon-Bonded (DSB) Wafer

著者名:

掲載資料名:

Semiconductor Wafer Bonding 10: Science, Technology, and Applications

シリーズ名:

ECS transactions

シリーズ巻号:

16(8)

発行年:

2008

開始ページ:

433

終了ページ:

440

総ページ数:

8

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776547 [1566776546]

言語:

英語

請求記号:

E23400/16-8

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047171
シリーズID:	PA00000034
会議名:	Pacific Rim Meeting, PRiME ; Meeting of ECS-The Electrochemical Society ; Fall Meeting of The Electrochemical Society of Japan
回次:	2008 ; 214th ; 2008
会議開催地:	Honolulu, Hawaii, USA
会議開催年:	2008.10.14-2008.10.16
論文注記:	Pacific Rim Meeting, PRiME 2008: joint International Meeting of the 214th Meeting of ECS-The Electrochemical Society, and the 2008 Fall Meeting of The Electrochemical Society of Japan

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