Influence of the Structural and Compositional Properties of PECVD Silicon Nitride as a Passivation Layer for AlGaN HEMTs

Influence of the Structural and Compositional Properties of PECVD Silicon Nitride as a Passivation Layer for AlGaN HEMTs

著者名:

掲載資料名:

State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) and Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9

シリーズ名:

ECS transactions

シリーズ巻号:

16(7)

発行年:

2008

開始ページ:

181

終了ページ:

191

総ページ数:

11

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776530 [1566776538]

言語:

英語

請求記号:

E23400/16-7

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047170
シリーズID:	PA00000034
会議名:	State-of-the-Art Program on Compound Semiconductor (SOTAPOCS 49) symposium ; Symposium Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics ; Meeting of The Electrochemical Society
回次:	49th ; 9th ; 214th
会議開催地:	Honolulu, Hawaii, USA
会議開催年:	2008.10.12-2008.10.17
論文注記:	49th State-of-the-Art Program on Compound Semiconductor (SOTAPOCS 49) symposium and the 9th Symposium Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics were held at the 214th Meeting of The Electrochemical Society, on october 12-17, 2008 in Honolulu, Hawaii, USA

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