Formation and Annihilation of Hydrogen Related Donor States in Proton Implanted and Subsequently Plasma Hydrogenated N-Type Float Zone Silicon

Formation and Annihilation of Hydrogen Related Donor States in Proton Implanted and Subsequently Plasma Hydrogenated N-Type Float Zone Silicon

著者名:

掲載資料名:

High Purity Silicon 10

シリーズ名:

ECS transactions

シリーズ巻号:

16(6)

発行年:

2008

開始ページ:

151

終了ページ:

161

総ページ数:

11

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776523 [156677652X]

言語:

英語

請求記号:

E23400/16-6

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00052896
シリーズID:	PA00000034
会議名:	International Symposium on High Purity Silicon ; Meeting of the Electrochemical Society
回次:	10th ; 214th
会議開催地:	Honolulu, HI, USA
会議開催年:	2008.10.12-2008.10.17
論文注記:	10th International Symposium on High Purity Silicon, 214th ECS Meeting, Honolulu, HI, October 12 - October 17, 2008

類似資料:

1 国際会議録 Distribution of Hydrogen- and Vacancy-Related Donor and Acceptor States in Helium-Implanted and Plasma-Hydrogenated Float-Zone Silicon Reinhart Job, Franz-Josef Niedernostheide, Hans-Joachim Schulze, Holger Schulze Materials Research Society	7 国際会議録 A Low Temperature Technology on the Base of Hydrogen Enhanced Thermal Donor Formation for Future High-Voltage Applications Job, R., Ulyashin, A.G., Fahrner, W.R., Niedernostheide, F.J., Schulze, H.J., Simoen, E., Claeys, C.L., Tonelli, G. SPIE-The International Society for Optical Engineering
2 国際会議録 Formation of Doping Profiles in Float Zone Silicon by Helium Implantation and Plasma Hydrogenation Reinhart Job, Franz-Josef Niedernostheide, Hans-Joachim Schulze, Holger Schulze Materials Research Society	8 国際会議録 Hydrogen Enhanced Thermal Donor Formation in p-Type Czochralski Silicon with a Denuded Zone Ulyashin, U.G., Petlitskii, A.N., Job, R., Fahrner, W.R. Electrochemical Society
3 国際会議録 Doping Of Oxidized Float Zone Silicon By Thermal Donors - A Low Thermal Budget Doping Method For Device Applications? Job, R., Ulyashin, A.G., Huang, Y.L., Fahrner, W.R., Simoen, E., Claeys, C., Niedernostheide, F.-J., Schulze, H.-J., … Materials Research Society	9 国際会議録 Hydrogen Gettering and Platelet Formation in Implanted and Hydrogenated Silicon A. Job, W. Düngen, Y. Ma, W. R. Fahrner, L. O. Keller, J. T. Horstmann, H. Fiedler Electrochemical Society
4 国際会議録 Hydrogen-Related Donor Formation: Fabrication Techniques, Characterization, and Application to High-voltage Superjunction Transistors H. Schuize, M. Buzzo, F. Niedernostheide, M. Rueb, R. Job Electrochemical Society	10 国際会議録 Formation of Hydrogen Related Defects and Nano-Voids in Plasma Hydrogenated ZnO Reinhart Job Materials Research Society
5 国際会議録 Void Formation in Hydrogen Implanted and Subsequently Plasma Hydrogenated and Annealed Czochralski Silicon Job, R., Dungen, W., Ma, Y., Huang, Y.L., Horstmann, J.T. Materials Research Society	11 国際会議録 P-N Junction Diodes Fabricated Based on Donor Formation in Plasma Hydrogenated P-Type Czochralski Silicon Huang, Y.L., Simoen, E., Job, R., Claeys, C., Dungen, W., Ma, Y., Fahrner, W.R., Versluys, J., Clauws, P. Materials Research Society
6 国際会議録 Low temperature Doping of Silicon by Hydrogen Plasma Treatments* Job, R., Ulyashin, A.G., Ma, Y., Fahnwr, W.R., Simoen, E., Rafi, J.M., Claeys, C., Niedernostheide, F.J., Schulze, H.J. Electrochemical Society	12 国際会議録 The Conversion of Czochralski Silicon From p-Type to n-Type by Hydrogen Plasma-Enhanced Thermal Donor Formation Job, R., Borchert, D., Bumay, Yu. A., Fahrner, W. R., Grabosch, G., Khorunzhii, I. A., Ulyashin, A. G. MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12