Vacancy-Phosphorous Defect Complex in as-grown, Ultra Pure, Float Zone Single Crystal Silicon

Vacancy-Phosphorous Defect Complex in as-grown, Ultra Pure, Float Zone Single Crystal Silicon

著者名:

掲載資料名:

High Purity Silicon 10

シリーズ名:

ECS transactions

シリーズ巻号:

16(6)

発行年:

2008

開始ページ:

109

終了ページ:

120

総ページ数:

12

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776523 [156677652X]

言語:

英語

請求記号:

E23400/16-6

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00052896
シリーズID:	PA00000034
会議名:	International Symposium on High Purity Silicon ; Meeting of the Electrochemical Society
回次:	10th ; 214th
会議開催地:	Honolulu, HI, USA
会議開催年:	2008.10.12-2008.10.17
論文注記:	10th International Symposium on High Purity Silicon, 214th ECS Meeting, Honolulu, HI, October 12 - October 17, 2008

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