Effects of Low Temperature O2 Treatment on the Electrical Characteristics of Amorphous LaAlO3 Films by Atomic Layer Deposition

Effects of Low Temperature O2 Treatment on the Electrical Characteristics of Amorphous LaAlO3 Films by Atomic Layer Deposition

著者名:

掲載資料名:

Physics and technology of high-k gate dielectrics 6

シリーズ名:

ECS transactions

シリーズ巻号:

16(5)

発行年:

2008

開始ページ:

471

終了ページ:

478

総ページ数:

8

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776516 [1566776511]

言語:

英語

請求記号:

E23400/16-5

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00049541
シリーズID:	PA00000034
会議名:	International Symposium on High Dielectric Constant Materials and Gate Stacks ; Meeting of the Electrochemical Society
回次:	6th ; 214th
会議開催地:	Honolulu, HI, USA
会議開催年:	2008.10.12-2008.10.17
論文注記:	The sixth International Symposium on High Dielectric Constant Materials and Gate Stacks, held in Honolulu, Hawaii, October 13 to 15, 2008. Invited paper

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