Interface Characterization of CeO2-Gated MOSFETs Using Gated Diode Method and Charge Pumping Technique

Interface Characterization of CeO2-Gated MOSFETs Using Gated Diode Method and Charge Pumping Technique

著者名:

掲載資料名:

Physics and technology of high-k gate dielectrics 6

シリーズ名:

ECS transactions

シリーズ巻号:

16(5)

発行年:

2008

開始ページ:

423

終了ページ:

432

総ページ数:

10

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776516 [1566776511]

言語:

英語

請求記号:

E23400/16-5

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00049541
シリーズID:	PA00000034
会議名:	International Symposium on High Dielectric Constant Materials and Gate Stacks ; Meeting of the Electrochemical Society
回次:	6th ; 214th
会議開催地:	Honolulu, HI, USA
会議開催年:	2008.10.12-2008.10.17
論文注記:	The sixth International Symposium on High Dielectric Constant Materials and Gate Stacks, held in Honolulu, Hawaii, October 13 to 15, 2008

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