Fundamental Aspects of Effective Work Function Instability of Metal/Hf-based High-κ Gate Stacks

Fundamental Aspects of Effective Work Function Instability of Metal/Hf-based High-κ Gate Stacks

著者名:

掲載資料名:

Physics and technology of high-k gate dielectrics 6

シリーズ名:

ECS transactions

シリーズ巻号:

16(5)

発行年:

2008

開始ページ:

27

終了ページ:

38

総ページ数:

12

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776516 [1566776511]

言語:

英語

請求記号:

E23400/16-5

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00049541
シリーズID:	PA00000034
会議名:	International Symposium on High Dielectric Constant Materials and Gate Stacks ; Meeting of the Electrochemical Society
回次:	6th ; 214th
会議開催地:	Honolulu, HI, USA
会議開催年:	2008.10.12-2008.10.17
論文注記:	The sixth International Symposium on High Dielectric Constant Materials and Gate Stacks, held in Honolulu, Hawaii, October 13 to 15, 2008. Invited paper

類似資料:

1 国際会議録 Interface Engineering by PVD-Based In-Situ Fabrication Method for Advanced Metal/High-k Gate Stacks H. Watanabe, S. Horie, H. Arimura, N. Kitano, T. Minami, M. Kosuda, T. Shimura, K. Yasutake Electrochemical Society	7 国際会議録 Effective Workfunction Modulation by As Implantation in Metal Gate Stacks R. Singanamalla, H. Yu, T. Janssens, T. Witters, T. Schram, S. Kubicek, S. DeGendt, M. Jurczak, K. De Meyer Electrochemical Society
2 国際会議録 AION/SiO₂ Stacked Gate Dielectrics for 4H-SiC MIS Devices T. Hosoi, M. Harada, Y. Kagei, Y. Watanabe, T. Shimura Trans Tech Publications	8 国際会議録 THEORETICAL INVESTIGATION OF THE INTERFACES BETWEEN HF-BASED HIGH-K DIELECTRICS AND POLY-SI AND METAL GATES SHIRAISHI, K. 1,2,, NAKAYAMA, T. 3, AKASAKA, Y. 4, MlIYAZAKI, S. 5,2,, NAKAOKA, T. 1, OHMORI, K. 2, AHMET, P. 2, TORII, … Electrochemical Society
3 国際会議録 Structure and Surface Morphology of Thermal SiO₂ Grown on 4H-SiC by Metal-Enhanced Oxidation Using Barium A. Chanthaphan, Y. Katsu, T. Hosoi, T. Shimura, H. Watanabe Trans Tech Publications	9 国際会議録 Application of Advanced Atomic Layer Deposition for Understanding and Control of VTH and EOT in Metal/High-κ Gate Stacks A. Toriumi, T. Nabatame, H. Ota Electrochemical Society
4 国際会議録 Improvement of SiO₂/4H-SiC Interface Quality by Post-Oxidation Annealing in N₂ at High-Temperatures A. Chanthaphan, Y.H. Cheng, T. Hosoi, T. Shimura, H. Watanabe Trans Tech Publications	10 国際会議録 ALD La-Based Oxides for Vt-Tuning in High-Κ/Metal Gate Stacks J. Swerts, Y. Fedorenko, J. Maes, E. Tois, A. Delabie Electrochemical Society
5 国際会議録 Theoretical Studies on Metal/High-k Gate Stacks K. Shiraishi, Y. Akasaka, G. Nakamura, T. Nakayama, S. Miyazaki, H. Watanabe, A. Ohta, K. Ohmori, T. Chikyow, Y. Nara, … Electrochemical Society	11 国際会議録 Application of Synchrotron X-ray Diffraction Methods to Gate Stacks of Advanced MOS Devices T. Shimura, T. Inoue, Y. Okamoto, T. Hosoi, A. Ogura Electrochemical Society
6 国際会議録 Enabling Effective Work Function Tuning by RF-PVD Metal Oxide on High-k Gate Dielectric N. Yoshida, X. Tang, K. Ahmed, G. Conti, D. Liu Electrochemical Society	12 国際会議録 Control of Crystalline Microstructures in Metal Gate Electrodes for Nano CMOS Devices K. Ohmori, T. Chikyow, T. Hosoi, H. Watanabe, K. Nakajima Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12