Electrical Properties of High-κ ALD HfO2 Deposited on Strained Si Layers Epitaxially Grown on Si0.8Ge0.2/Si Substrates

Electrical Properties of High-κ ALD HfO2 Deposited on Strained Si Layers Epitaxially Grown on Si0.8Ge0.2/Si Substrates

著者名:

掲載資料名:

Atomic layer deposition applications 4

シリーズ名:

ECS transactions

シリーズ巻号:

16(4)

発行年:

2007

開始ページ:

51

終了ページ:

58

総ページ数:

8

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566776509 [1566776503]

言語:

英語

請求記号:

E23400/11-4

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00052898
シリーズID:	PA00000034
会議名:	Symposium on Atomic Layer Deposition Applications ; Meeting of the Electrochemical Society
回次:	4th ; 214th
会議開催地:	Honolulu, Hawaii, USA
会議開催年:	2008.10.13-2008.10.15
論文注記:	4th Symposium on Atomic Layer Deposition Applications, 214th Meeting of the Electrochemical Society, Honolulu, Hawaii, October 13-15, 2008

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