Oxidant Effect on Resistance Switching Characteristics of HfO2 film Grown Atomic Layer Deposition

Oxidant Effect on Resistance Switching Characteristics of HfO2 film Grown Atomic Layer Deposition

著者名:

掲載資料名:

Atomic layer deposition applications 3

シリーズ名:

ECS transactions

シリーズ巻号:

11(7)

発行年:

2007

開始ページ:

61

終了ページ:

66

総ページ数:

6

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775731 [1566775736]

言語:

英語

請求記号:

E23400/11-7

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00052897
シリーズID:	PA00000034
会議名:	Symposium on Atomic Layer Deposition Applications ; Meeting of the Electrochemical Society
回次:	3rd ; 212th
会議開催地:	Washington, DC, USA
会議開催年:	2007.10.08-2007.10.09
論文注記:	3rd Symposium on Atomic Layer Deposition Applications, 212th Meeting of the Electrochemical Society, Hilton Washington, Washington, DC, October 8-9, 2007

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