Materials and Process Integration Issues in Metal Gate/High-κ Stacks and Their Dependence on Device Performance

Materials and Process Integration Issues in Metal Gate/High-κ Stacks and Their Dependence on Device Performance

著者名:

掲載資料名:

Physics and technology of high-k gate dielectrics 5

シリーズ名:

ECS transactions

シリーズ巻号:

11(4)

発行年:

2007

開始ページ:

265

終了ページ:

274

総ページ数:

10

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775700 [1566775701]

言語:

英語

請求記号:

E23400/11-4

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00049542
シリーズID:	PA00000034
会議名:	International Symposium on High Dielectric Constant Materials and Gate Stacks ; Meeting of the Electrochemical Society
回次:	5th ; 212th
会議開催地:	Washington, D.C., USA
会議開催年:	2007.10.08-2007.10.10
論文注記:	Fifth International Symposium on High Dielectric Constant Materials and Gate Stacks, held in Washington, DC from October 8 to 10, 200

類似資料:

1 国際会議録 Charge Trapping & NBTI in High k Gate Dielectric Stacks S. Zafar, A. Callegari, J. Stathis Electrochemical Society	7 国際会議録 Atomic Layer Deposition of High-κ/Metal Gate Stack MOSFET-Devices on Strained Silicon-on-Insulator Substrates C. Henkel, S. Abermann, O. Bethge, M. Reiche, E. Bertagnolli Electrochemical Society
2 国際会議録 Integration Issues with High k Gate Stacks* Osburn, C.M., Han, S.K., Kim, I., Campbell, S.A., Garfunkel, E., Gustafson, T., Hauser, J., King, T.-J., Liu, Q., … Electrochemical Society	8 国際会議録 Identifying Performance-Critical Defects in the High-κ/Metal Gate Stacks G.i Bersuker, D. Hen, J. Price, A. Neugroschel, H. Tseng Electrochemical Society
3 国際会議録 Microscopic Understanding of PBTI and NBTI Mechanisms in High-κ / Metal Gate Stacks M. Sato, K. Yamabe, K. Shiraishi, S. Miyazaki, K. Yamada Electrochemical Society	9 国際会議録 Control of Material Interactions in Advanced High-k Metal Gate Stacks C. Wajda, G. Leusink, K. Akiyama, S. Ashigaki, S. Aoyama, K. Shimomura, M. Aruga, T. Takahashi, K. Yamazaki, H. Yamasaki Electrochemical Society
4 国際会議録 37 Electron Mobility Dependence of W/HfO2 Gate Stacks on Interfacial Layer Preparation Callegari, A., Jamison, P., Zafar, S., Lacey, D., McFeefy, F., Shepard, J., Gusev, E.P., Cartier, E., Jammy, R. Electrochemical Society	10 国際会議録 Challenges in Integration of Metal Gate High-k Dielectrics Gate Stacks Tsai, W., Ragnarrson, L.-A., Schram, T., DeGendt, S., Heyns, M. Electrochemical Society
5 国際会議録 HIGH PERFORMANCE NMOSFET WITH HFSIX/HFO2 GATE STACK BY LOW TEMPERATURE PROCESS TAI, K., HIRANO, T., ANDO, T., YAMAGUCHI, S., KATO, T., HIYAMA, S., HAGIMOTO, Y., YAMAGISHI, N., WATANABE, K., YAMAMOTO, … Electrochemical Society	11 国際会議録 Fundamental Aspects of Effective Work Function Instability of Metal/Hf-based High-κ Gate Stacks H. Watanabe, S. Yoshida, Y. Kita, T. Hosoi, T. Shimura Electrochemical Society
6 国際会議録 In-Situ Deposition of High-κ Gate Stack on InGaAs and GaAs for Metal-Oxide-Semiconductor Devices with Low Equivalent Oxide Thickness R. Kambhampati, S. Koveshnikov, V. Tokranov, M. Yakimov, R. Moore Electrochemical Society	12 国際会議録 Challenges with Respect to High-κ/Metal Gate Stack Etching and Cleaning R. Vos, S. Arnauts, I. Bovie, B. Onsia, S. Garaud Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12