Crystallization of Amorphous Si Thin Films Using Sub-nm Nickel Oxide Thin Layers Deposited by Atomic Layer Deposition

Crystallization of Amorphous Si Thin Films Using Sub-nm Nickel Oxide Thin Layers Deposited by Atomic Layer Deposition

著者名:

掲載資料名:

Atomic layer deposition applications 2

シリーズ名:

ECS transactions

シリーズ巻号:

3(15)

発行年:

2007

開始ページ:

279

終了ページ:

282

総ページ数:

4

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

19385862

ISBN:

9781566775427 [1566775426]

言語:

英語

請求記号:

E23400/3-15

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00047119
シリーズID:	PA00000034
会議名:	Symposium on Atomic Layer Deposition Applications ; Meeting of the Electrochemical Society
回次:	2nd ; 210th
会議開催地:	Cancun, Mexico
会議開催年:	2006.10.29-2006.11.01
論文注記:	2nd Symposium on Atomic Layer Deposition Applications, 210th meeting of the Electrochemical Society, Moon Palace Resort, Cancun, Mexico, October 29 - November 1, 2006

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