Analysis of adsorption effect of absorbent and threshold limit value (TLV) of Q-time for 193nm ArF reticle haze resistance

Analysis of adsorption effect of absorbent and threshold limit value (TLV) of Q-time for 193nm ArF reticle haze resistance

著者名:

F.-S. Chu ( Rexchip Electronics Corp., Taiwan )
S.-H. Chiou ( Rexchip Electronics Corp., Taiwan )

掲載資料名:

Lithography Asia 2008

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

7140

発行年:

2008

巻:

2

開始ページ:

71403F-1

終了ページ:

71403F-12

総ページ数:

12

出版情報:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819473813 [0819473812]

言語:

英語

請求記号:

P63600/7140

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00052771
シリーズID:	PA00000029
会議名:	Lithography Asia
回次:	2008
会議開催地:	Taipei, Taiwan
会議開催年:	2008.11.04-2008.11.06
論文注記:	Lithography Asia 2008, 4-6 November 2008, Taipei, Taiwan - Poster Session, 71403F, 7140-124

類似資料:

1 国際会議録 A study of high peroxynitrite generated in purge head outlet of charger with continuous supply of superior purification CDA system for 193 nm ArF reticte haze … F. -S. Chu, S. -H. Chiou Society of Photo-optical Instrumentation Engineers	7 国際会議録 Longevity of 193-nm/ArF excimer pellicle Kozeki,T., Shigematsu,S., Kondo,M., Nakagawa,H. SPIE-The International Society for Optical Engineering
2 国際会議録 Effective solution to reticle haze formation at 193nm lithography W.-J. Tseng, S.-H. Chiou, M.-C. Chiu, P.-S. Lee Society of Photo-optical Instrumentation Engineers	8 国際会議録 Subpicometer ArF excimer laser for 193-nm lithography Akita,J., Komori,H., Kouda,N., Yoshioka,S., Itakura,Y., Mizoguchi,H. SPIE-The International Society for Optical Engineering
3 国際会議録 Study of time dependent 193 nm reticle haze J. Gordon, L. Frisa, C. Chovino, D. Chan, J. Keagy Society of Photo-optical Instrumentation Engineers	9 国際会議録 A practical solution to the critical problem of 193 nm reticle haze D. L Halbmaier, Y. Ohyashiki, O. Kishkovich Society of Photo-optical Instrumentation Engineers
4 国際会議録 Contrarian approach to and ultimate solution for 193nm reticle haze O. Kishkovich, A. Grayfer, F. V. Belanger SPIE - The International Society of Optical Engineering	10 国際会議録 A practical solution to the critical problem of 193 nm reticle haze O. Kishkovich, D. Halbmaier, X. Gabarre, B. Grenon, J. Lo Society of Photo-optical Instrumentation Engineers
5 国際会議録 The effect of polarized 193nm irradiation on photomask haze formation Kim, Y. D., Kang, H. B., Zhang, Y., Tran, C., Farrar, N., Qin, J., Rockwell, B., Cho, H. J., Cottle, R., Chan, D., … SPIE - The International Society of Optical Engineering	11 国際会議録 Haze detection and haze-induced process latitude variation for low-ki 193 nm lithography [6349-105] Kim, S.-J., Park, J.-B., Kim, S.H., Kang, H.-Y., Kang, Y.-M., Park, S.-W., An, I., Oh, H.-K. SPIE - The International Society of Optical Engineering
6 国際会議録 Reticle haze: an industrial approach S. Gough, X. Gerard, P. Bichebois, A. Roche, F. Sundermann, V. Guyader, Y. Bieron, J. Galvier, S. Nicoleau SPIE - The International Society of Optical Engineering	12 国際会議録 An effective haze monitoring method S.-P. Lu, S.-H. Chiou, W.-J. Tseng Society of Photo-optical Instrumentation Engineers

1

2

3

4

5

6

7

8

9

10

11

12