Photoluminescence properties of rare-earth doped Si-based films materials

Photoluminescence properties of rare-earth doped Si-based films materials

著者名:

Q. Wang ( Nanchang Univ., China )
M. Yuan ( Nanchang Univ., China )
X. Leng ( Nanchang Univ., China )

掲載資料名:

Optoelectronic Materials and Devices III

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

7135

発行年:

2008

巻:

2

開始ページ:

71353D-1

終了ページ:

71353D-4

総ページ数:

4

出版情報:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819473752 [0819473758]

言語:

英語

請求記号:

P63600/7135

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00052766
シリーズID:	PA00000029
会議名:	Asia Communications and Photonics : Optoelectronic Materials and Devices
回次:	2008 : 3rd
会議開催地:	Hangzhou, China
会議開催年:	2008.10.27-2008.10.30
論文注記:	Optoelectronic Materials and Devices III, 27-30 October 2008, Hangzhou, China - Poster Session, 71353D, 7135-125

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