Double-patterning decomposition, design compliance, and verification algorithms at 32nm hp

Double-patterning decomposition, design compliance, and verification algorithms at 32nm hp

著者名:

A. Tritchkov ( Mentor Graphics Corp., United States )
P. Glotov ( Mentor Graphics Corp., United States )
S. Komirenko ( Mentor Graphics Corp., United States )
E. Sahouria ( Mentor Graphics Corp., United States )
A. Torres ( Mentor Graphics Corp., United States )

掲載資料名:

Photomask technology 2008

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

7122

発行年:

2008

巻:

1

開始ページ:

71220S-1

終了ページ:

71220S-15

総ページ数:

15

出版情報:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819473554 [0819473553]

言語:

英語

請求記号:

P63600/7122

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00052753
シリーズID:	PA00000029
会議名:	SPIE Photomask Technology : Annual BACUS Symposium on Photomask Technology
回次:	2008 : 28th
会議開催地:	Monterey, California, USA
会議開催年:	2008.10.07-2008.10.10
論文注記:	Photomask technology 2008, 7-10 October 2008, Monterey, California, USA - Session 6. DPL Implementation II, 71220S, 7122-26

類似資料:

1 国際会議録 Double pattern EDA solutions for 32nm HP and beyond G. E. Bailey, A. Tritchkov, J. Park, L. Hong, V. Wiaux, E. Hendrickx, S. Verhaegen, P. Xie, J. Versluijs SPIE - The International Society of Optical Engineering	7 国際会議録 Simultaneous model-based main feature and SRAF optimization for 2D SRAF implementation to 32 nm critical layers A. Yehia, A. Tritchkov Society of Photo-optical Instrumentation Engineers
2 国際会議録 Assessment of complementary double dipole lithography for 45 nm and 32 nm technologies Postnikov, S. V., Robert, E., Thony, P., Patterson, K., Warrick, S., Henry, D., Torres, A., Toublon, O. SPIE - The International Society of Optical Engineering	8 国際会議録 Advanced mask process modeling for 45-nm and 32-nm nodes E. Tejnil, Y. Hu, E. Sahouria, S. Schulze, M. J. Tian Society of Photo-optical Instrumentation Engineers
3 国際会議録 Double patterning design split implementation and validation for the 32nm node M. Drapeau, V. Wiaux, E. Hendrickx, S. Verhaegen, T. Machida SPIE - The International Society of Optical Engineering	9 国際会議録 Model-based SRAF insertion through pixel-based mask optimization at 32nm and beyond K. Sakajiri, A. Tritchkov, Y. Granik Society of Photo-optical Instrumentation Engineers
4 国際会議録 32-nm SOC printing with double patterning, regular design, and 1.2 NA immersion scanner Y. Trouiller, V. Farys, A. Borjon, J. Belledent, C. Couderc, F. Sundermann, J. Urbani, Y. Rody, C. Gardin, J. Planchot, … SPIE - The International Society of Optical Engineering	10 国際会議録 PMJ 2007 panel discussion overview: double exposure and double patterning for 32-nm half-pitch design node Y. Nagaoka, H. Watanabe Society of Photo-optical Instrumentation Engineers
5 国際会議録 Double patterning overlay and CD budget for 32 nm technology node U. Iessi, S. Loi, A. Salerno, P. Rigolli, E. De Chiara Society of Photo-optical Instrumentation Engineers	11 国際会議録 Double patterning for 32nm and below: an update J. Finders, M. Dusa, B. Vleeming, H. Megens, B. Hepp Society of Photo-optical Instrumentation Engineers
6 国際会議録 Design verification flow for model-assisted double-dipole decomposition Torres, J.A., Schellenberg, F.M., Toublan, O. SPIE-The International Society for Optical Engineering	12 国際会議録 Development of materials and processes for double patterning toward 32-nm node 193-nm immersion lithography process S. Tarutani, H. Tsubaki, S. Kanno Society of Photo-optical Instrumentation Engineers

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