Parasitic bipolar effect in modern SOI CMOS technologies
- 著者名:
- V. E. Shunkov ( Moscow Engineering Physical Institute, Russia )
- M. S. Gorbunov ( Moscow Engineering Physical Institute, Russia )
- G. I. Zebrev ( Moscow Engineering Physical Institute, Russia )
- B. V. Vasilegin ( Scientific Research Institute for System Studies, Russia )
- 掲載資料名:
- Micro- and nanoelectronics 2007 : 1-5 October 2007, Zvenigorod, Russia
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 7025
- 発行年:
- 2008
- 開始ページ:
- 702516-1
- 終了ページ:
- 702516-8
- 総ページ数:
- 8
- 出版情報:
- Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers
- ISSN:
- 0277786X
- ISBN:
- 9780819472380 [0819472387]
- 言語:
- 英語
- 請求記号:
- P63600/7025
- 資料種別:
- 国際会議録
類似資料:
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2
国際会議録
Radiation induced leakage due to stochastic charge trapping in isolation layers of nanoscale MOSFETs
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SPIE - The International Society for Optical Engineering |
Electrochemical Society |
Electrochemical Society |
SPIE - The International Society for Optical Engineering |
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SPIE - The International Society for Optical Engineering |
Electrochemical Society |
SPIE - The International Society for Optical Engineering |
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