Nitrogen incorporation characteristics of 4H-SiC epitaxial layer

Nitrogen incorporation characteristics of 4H-SiC epitaxial layer

著者名:

R. Jia ( Xidian Univ., China )
Y. Zhang ( Xidian Univ., China )
Y. Wang ( Xidian Univ., China )

掲載資料名:

Sixth International Conference on Thin Film Physics and Applications : 25-28 September 2007, Shanghai, China

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

6984

発行年:

2008

開始ページ:

69840V-1

終了ページ:

69840V-4

総ページ数:

4

出版情報:

Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers

ISSN:

0277786X

ISBN:

9780819471826 [0819471828]

言語:

英語

請求記号:

P63600/6984

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00052615
シリーズID:	PA00000029
会議名:	International Conference on Thin Film Physics and Applications
回次:	2007 : 6th
会議開催地:	Shanghai, China
会議開催年:	2007.09.25-2007.09.28
論文注記:	Sixth International Conference on Thin Film Physics and Applications, 25-28 September 2007, Shanghai, China - Session 2. Thin Film Materials, 69840V, 6984-30

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