Non-chemically amplified resists for 193 nm lithography
- 著者名:
- I. Nishimura ( Univ. of Texas at Austin, USA )
- W. H. Heath ( Univ. of Texas at Austin, USA )
- K. Matsumoto ( Univ. of Texas at Austin, USA )
- W.-L. Jen ( Univ. of Texas at Austin, USA )
- S. S. Lee ( Univ. of Texas at Austin, USA )
- 掲載資料名:
- Advances in resist materials and processing technology XXV
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 6923
- 発行年:
- 2008
- 巻:
- 1
- 開始ページ:
- 69231C-1
- 終了ページ:
- 69231C-8
- 総ページ数:
- 8
- 出版情報:
- Bellingham, Wash.: Society of Photo-optical Instrumentation Engineers
- ISSN:
- 0277786X
- ISBN:
- 9780819471086 [0819471089]
- 言語:
- 英語
- 請求記号:
- P63600/6923
- 資料種別:
- 国際会議録
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Modification of development parameters of 193-nm chemically amplified resist with pattern density
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